| 摘要 |
A thin-film transistor (100) manufacturing method includes the following: a step for forming an oxide semiconductor film (141) on a substrate (110); a step for forming a silicon film (151) on the oxide semiconductor film (141); and a step for (i) forming a silicon oxide film (152) and (ii) supplying oxygen to the oxide semiconductor film (141), by plasma oxidizing the silicon film (151). |
