| 摘要 |
A semiconductor device, comprising a substrate (110), a buried layer (120) formed on the substrate (110), a diffusion layer (130) formed on the buried layer (120), and a gate electrode (144) formed on the diffusion layer (130), wherein the diffusion layer (130) comprises a first diffusion area (132) and a second diffusion area (134), wherein the impurity type of the second diffusion area (134) is opposite to the impurity type of the first diffusion area (132); and a plurality of third diffusion areas (136) are formed in the second diffusion area (134), and the impurity type of each of the third diffusion areas (136) is opposite to the impurity type of the second diffusion area (134). Also provided is a preparation method for a semiconductor device. |
