MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

According to one embodiment, a memory device includes a first interconnect having a divided portion formed in the first interconnect, a memory cell member provided on the first interconnect, a second interconnect provided on the memory cell member, a semiconductor member provided on the first interconnect to be connected between portions of the first interconnect on two sides of the divided portion, an insulating film covering an upper surface of the semiconductor member and a side surface of at least an upper portion of the semiconductor member, and an electrode provided on the insulating film to cover the upper surface of the semiconductor member and the side surface of the at least an upper portion of the semiconductor member with the insulating film interposed.

主权项

1. A memory device, comprising:
a first interconnect, a divided portion being formed in the first interconnect; a memory cell member provided on the first interconnect; a second interconnect provided on the memory cell member; a semiconductor member provided on the first interconnect to be connected between portions of the first interconnect on two sides of the divided portion; an insulating film covering an upper surface of the semiconductor member and a side surface of at least an upper portion of the semiconductor member; and an electrode provided on the insulating film to cover the upper surface of the semiconductor member and the side surface of the at least an upper portion of the semiconductor member with the insulating film interposed.