Semiconductor Device and Manufacturing Method of the Same

摘要

There is provided a manufacturing method of a semiconductor device having an N-type semiconductor layer on a P-type semiconductor layer. The manufacturing method comprises: a dry etching process of performing dry etching to go through the N-type semiconductor layer in a thickness direction and make the plane in the thickness direction of the P-type semiconductor layer exposed; and a annealing process of annealing the P-type semiconductor layer in an atmosphere containing oxygen, after the dry etching process. This manufacturing method improves the electrical properties of the P-type semiconductor layer.

主权项

1. A manufacturing method of a semiconductor device having an N-type semiconductor layer on a P-type semiconductor layer, the manufacturing method comprising:
a dry etching process of performing dry etching to go through the N-type semiconductor layer in a thickness direction and make a plane in the thickness direction of the P-type semiconductor layer exposed; and a annealing process of annealing the P-type semiconductor layer in an atmosphere containing oxygen, after the dry etching process.