发明名称 PATTERNING THROUGH IMPRINTING
摘要 Embodiments of present invention provide a method of forming device pattern. The method includes defining a device pattern to be created in a device layer; forming a sacrificial layer on top of the device layer; identifying an imprinting mold that, at a position along a height thereof, has a horizontal cross-sectional shape that represents the device pattern; pushing the imprinting mold uniformly into the sacrificial layer until at least the position of the imprinting mold reaches a level inside the sacrificial layer that is being pushed by the imprinting mold; removing the imprinting mold away from the sacrificial layer; forming a hard mask in recesses created by the imprinting mold in the sacrificial layer, the hard mask has a pattern representing the device pattern; and transferring the pattern of the hard mask into underneath the device layer.
申请公布号 US2015162194(A1) 申请公布日期 2015.06.11
申请号 US201314102873 申请日期 2013.12.11
申请人 STMicroelectronics, Inc. ;International Business Machines Corporation 发明人 Clevenger Lawrence A.;Radens Carl J.;Wise Richard S.;Xu Yiheng;Zhang John
分类号 H01L21/033;H01L21/02;H01L21/306 主分类号 H01L21/033
代理机构 代理人
主权项 1. A method comprising: defining a device pattern to be created in a device layer; forming a sacrificial layer on top of said device layer; identifying an imprinting mold that, along a height thereof, has a horizontal cross-sectional shape that represents said device pattern; pushing said imprinting mold uniformly into said sacrificial layer until at least said position of said imprinting mold reaches a level inside said sacrificial layer that is being pushed by said imprinting mold; removing said imprinting mold away from said sacrificial layer; forming a hard mask in recesses created by said imprinting mold in said sacrificial layer, said hard mask has a pattern representing said device pattern; and transferring said pattern of said hard mask into underneath said device layer, wherein pushing said imprinting mold into said sacrificial layer comprises causing said sacrificial layer to rise in height in places where portions of said imprinting mold that face said sacrificial layer do not touch said sacrificial layer.
地址 Coppell TX US