发明名称 |
Method of Manufacturing Semiconductor Device |
摘要 |
A method of manufacturing a semiconductor device includes processing a substrate accommodated in a process container accommodated in a housing by supplying a process gas onto the substrate; and exhausting the process container using an exhaust system comprising a first exhaust pipe connected to the process container, the first exhaust pipe having circular or oval cross-section perpendicular to an exhausting direction thereof; and a second exhaust pipe connected to the first exhaust pipe, the second exhaust pipe having square or rectangular cross-section perpendicular to the exhausting direction, wherein at least a portion of the second exhaust pipe is disposed within the housing. |
申请公布号 |
US2015162184(A1) |
申请公布日期 |
2015.06.11 |
申请号 |
US201514622126 |
申请日期 |
2015.02.13 |
申请人 |
Hitachi Kokusai Electric Inc. |
发明人 |
YAMAMOTO Tetsuo;KATO Tsutomu;OKADA Satoshi;TAKEBAYASHI Yuji |
分类号 |
H01L21/02;H01L27/108 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device, comprising:
(a) processing a substrate accommodated in a process container accommodated in a housing by supplying a process gas onto the substrate; and (b) exhausting the process container using an exhaust system comprising a first exhaust pipe connected to the process container, the first exhaust pipe having circular or oval cross-section perpendicular to an exhausting direction thereof; and a second exhaust pipe connected to the first exhaust pipe, the second exhaust pipe having square or rectangular cross-section perpendicular to the exhausting direction, wherein at least a portion of the second exhaust pipe is disposed within the housing. |
地址 |
Tokyo JP |