发明名称 Method of Manufacturing Semiconductor Device
摘要 A method of manufacturing a semiconductor device includes processing a substrate accommodated in a process container accommodated in a housing by supplying a process gas onto the substrate; and exhausting the process container using an exhaust system comprising a first exhaust pipe connected to the process container, the first exhaust pipe having circular or oval cross-section perpendicular to an exhausting direction thereof; and a second exhaust pipe connected to the first exhaust pipe, the second exhaust pipe having square or rectangular cross-section perpendicular to the exhausting direction, wherein at least a portion of the second exhaust pipe is disposed within the housing.
申请公布号 US2015162184(A1) 申请公布日期 2015.06.11
申请号 US201514622126 申请日期 2015.02.13
申请人 Hitachi Kokusai Electric Inc. 发明人 YAMAMOTO Tetsuo;KATO Tsutomu;OKADA Satoshi;TAKEBAYASHI Yuji
分类号 H01L21/02;H01L27/108 主分类号 H01L21/02
代理机构 代理人
主权项 1. A method of manufacturing a semiconductor device, comprising: (a) processing a substrate accommodated in a process container accommodated in a housing by supplying a process gas onto the substrate; and (b) exhausting the process container using an exhaust system comprising a first exhaust pipe connected to the process container, the first exhaust pipe having circular or oval cross-section perpendicular to an exhausting direction thereof; and a second exhaust pipe connected to the first exhaust pipe, the second exhaust pipe having square or rectangular cross-section perpendicular to the exhausting direction, wherein at least a portion of the second exhaust pipe is disposed within the housing.
地址 Tokyo JP