发明名称 Silicon on nothing pressure sensor
摘要 <p>A method of making a pressure sensing apparatus is provided herein. A plurality of trenches are etched on a first surface of a substrate. The substrate is annealed to form a diaphragm and an embedded cavity from the plurality of trenches, the diaphragm formed of a portion of the substrate wherein an exterior surface of the diaphragm is the first surface of the substrate and an interior surface of the diaphragm is a surface defining the embedded cavity. Piezoresistors are fabricated on the exterior surface of the diaphragm, the piezoresistors configured to change resistivity in response to strain resulting from deflection of the diaphragm. The substrate is mounted, including the diaphragm, in a housing such that a media can apply pressure to the diaphragm and such that the pressure can be sensed by determining a change in the resistivity of the piezoresistors.</p>
申请公布号 EP2881721(A2) 申请公布日期 2015.06.10
申请号 EP20140187836 申请日期 2014.10.06
申请人 HONEYWELL INTERNATIONAL INC. 发明人 BROWN, GREGORY C.;CHANG, STEVE
分类号 G01L9/00;G01L9/06 主分类号 G01L9/00
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