| 摘要 |
A semiconductor device of an embodiment includes: a second conductive substrate having a first conductive first doping layer; and multiple devices located on the second conductive substrate, wherein a first device among multiple devices includes a first nitrate semiconductor layer located on the first conductive first doping layer; a second nitrate semiconductor layer contacting with the first nitrate semiconductor layer, and forming a first heterojunction interface between the first conductive first doping layer and the first nitrate semiconductor layer; a first contact electrically connected to the first heterojunction interface; and a contact connection part electrically connecting the first contact and the first conductive doping layer. |
