发明名称 |
A METHOD OF TESTING DATA RETENTION OF A NON-VOLATILE MEMORY CELL HAVING A FLOATING GATE |
摘要 |
A method of decreasing the test time to determine data retention (e.g. leakage current) of a memory cell having a floating gate for the storage of charges thereon. The memory cell is characterized by the leakage current having a rate of leakage which is dependent upon the absolute value of the voltage of the floating gate. The memory cell is further characterized by a first erase voltage and a first programming voltage, applied during normal operation, and a first read current detected during normal operation. The method applies a voltage greater than the first erase voltage or greater than the first programming voltage, to over erase the floating gate. The memory cell including the floating gate is subject to a single high temperature bake. The memory cell is then tested for data retention of the floating gate based on the single high temperature bake. |
申请公布号 |
EP2777065(A4) |
申请公布日期 |
2015.06.10 |
申请号 |
EP20120848380 |
申请日期 |
2012.10.22 |
申请人 |
SILICON STORAGE TECHNOLOGY INC. |
发明人 |
MARKOV, VIKTOR;YOO, JONG-WON;BANSAL, SATISH;KOTOV, ALEXANDER |
分类号 |
G11C29/50;G11C29/06 |
主分类号 |
G11C29/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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