METHOD OF MANUFACTURING LOW TEMPERATURE-DOPED GRAPHENE

摘要

For a method for doping graphene at low temperatures capable of doping various dopants, the present invention provides the method for doping the graphene at the low temperatures which includes the steps of: preparing a substrate including the graphene on one side thereof; arranging a doping member with one or more coating layers with one or more dopants of a p-type dopant, an n-type dopant, and a transition metal dopant on the upper side of the graphene to be separated from the substrate; and supplying the dopants to the graphene by performing a thermal treatment process when the graphene is separated from the doping member.