| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To increase the on-state breakdown voltage, to improve the I-V characteristics, and to suppress generation of leak current through the protection layer of a compound semiconductor device. <P>SOLUTION: The compound semiconductor device includes: a carrier transit layer of GaN; a carrier supply layer of Al<SB>x</SB>Ga<SB>1-x</SB>N (0<x≤1) formed on the carrier transit layer; a GaN based protection layer of a first conductivity type GaN having the same conductivity type with the transit carrier, the GaN based protection layer having an opening is formed on the carrier supply layer; and a gate electrode formed in the opening. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
