发明名称 |
METHOD OF PRODUCING MONOPHASE INTERMETALLIC THIN FILM |
摘要 |
FIELD: physics.SUBSTANCE: invention relates to the physics of nanosized structures and particularly to a method of producing a monophase intermetallic thin film with a nanosize structure on a glass substrate, and can be used in different high-technology fields of industry and science to form nanostructured materials based on intermetallic compounds. A glass substrate in a vacuum at residual pressure of not less than 10Torr is coated with at least six metal layers in the sequence Cu/Sn/Cu/Sn/Cu/Sn, each layer having thickness of 30-60 nm and a chemical reaction takes place between layers through relaxation annealing by heating in a vacuum from room temperature to 600°C at a rate of 1 degree per second to facilitate volumetric synthesis.EFFECT: obtaining a monophase intermetallic thin film.4 dwg, 2 tbl, 4 ex |
申请公布号 |
RU2553148(C1) |
申请公布日期 |
2015.06.10 |
申请号 |
RU20130153046 |
申请日期 |
2013.11.28 |
申请人 |
FEDERAL'NOE GOSUDARSTVENNOE BJUDZHETNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "ALTAJSKIJ GOSUDARSTVENNYJ UNIVERSITET" |
发明人 |
PLOTNIKOV VLADIMIR ALEKSANDROVICH;MAKAROV SERGEJ VIKTOROVICH;MAKRUSHINA ANNA NIKOLAEVNA |
分类号 |
C23C14/18;C23C14/24;C23C14/58 |
主分类号 |
C23C14/18 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|