发明名称 METHOD OF PRODUCING MONOPHASE INTERMETALLIC THIN FILM
摘要 FIELD: physics.SUBSTANCE: invention relates to the physics of nanosized structures and particularly to a method of producing a monophase intermetallic thin film with a nanosize structure on a glass substrate, and can be used in different high-technology fields of industry and science to form nanostructured materials based on intermetallic compounds. A glass substrate in a vacuum at residual pressure of not less than 10Torr is coated with at least six metal layers in the sequence Cu/Sn/Cu/Sn/Cu/Sn, each layer having thickness of 30-60 nm and a chemical reaction takes place between layers through relaxation annealing by heating in a vacuum from room temperature to 600°C at a rate of 1 degree per second to facilitate volumetric synthesis.EFFECT: obtaining a monophase intermetallic thin film.4 dwg, 2 tbl, 4 ex
申请公布号 RU2553148(C1) 申请公布日期 2015.06.10
申请号 RU20130153046 申请日期 2013.11.28
申请人 FEDERAL'NOE GOSUDARSTVENNOE BJUDZHETNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "ALTAJSKIJ GOSUDARSTVENNYJ UNIVERSITET" 发明人 PLOTNIKOV VLADIMIR ALEKSANDROVICH;MAKAROV SERGEJ VIKTOROVICH;MAKRUSHINA ANNA NIKOLAEVNA
分类号 C23C14/18;C23C14/24;C23C14/58 主分类号 C23C14/18
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