摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide means for evaluating electrical characteristics of high resistance silicon with high reliability. <P>SOLUTION: A method for evaluating electrical characteristics of boron-doped p-type silicon having a boron concentration of 1.50x10<SP POS="POST">13</SP>atoms/cm<SP POS="POST">3</SP>or less includes the steps of: performing acid cleaning on a surface of silicon to be evaluated, performing heat treatment to the silicon having been cleaned so that the surface temperature of the silicon is within a range of 150-300°C; performing mechanical processing for removing an oxide film formed on the silicon surface after the heat treatment, the surface having been subjected to the acid treatment; and evaluating electrical characteristics selected from a group consisting of conductivity types and specific resistances, on the silicon surface after the mechanical processing. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |