发明名称 ボロンドープp型シリコンの電気的特性の評価方法、およびシリコンウェーハの製造方法
摘要 <p><P>PROBLEM TO BE SOLVED: To provide means for evaluating electrical characteristics of high resistance silicon with high reliability. <P>SOLUTION: A method for evaluating electrical characteristics of boron-doped p-type silicon having a boron concentration of 1.50x10<SP POS="POST">13</SP>atoms/cm<SP POS="POST">3</SP>or less includes the steps of: performing acid cleaning on a surface of silicon to be evaluated, performing heat treatment to the silicon having been cleaned so that the surface temperature of the silicon is within a range of 150-300°C; performing mechanical processing for removing an oxide film formed on the silicon surface after the heat treatment, the surface having been subjected to the acid treatment; and evaluating electrical characteristics selected from a group consisting of conductivity types and specific resistances, on the silicon surface after the mechanical processing. <P>COPYRIGHT: (C)2013,JPO&INPIT</p>
申请公布号 JP5733030(B2) 申请公布日期 2015.06.10
申请号 JP20110125094 申请日期 2011.06.03
申请人 发明人
分类号 H01L21/66 主分类号 H01L21/66
代理机构 代理人
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