发明名称 ヘテロエピタキシャル成長によるグラフェンの広い領域の堆積およびそれを含む生成物
摘要 <p>Certain example embodiments of this invention relate to the use of graphene as a transparent conductive coating (TCC). In certain example embodiments, graphene thin films grown on large areas hetero-epitaxially, e.g., on a catalyst thin film, from a hydrocarbon gas (such as, for example, C 2 H 2 , CH 4 , or the like). The graphene thin films of certain example embodiments may be doped or undoped. In certain example embodiments, graphene thin films, once formed, may be lifted off of their carrier substrates and transferred to receiving substrates, e.g., for inclusion in an intermediate or final product. Graphene grown, lifted, and transferred in this way may exhibit low sheet resistances (e.g., less than 150 ohms/square and lower when doped) and high transmission values (e.g., at least in the visible and infrared spectra).</p>
申请公布号 JP5731502(B2) 申请公布日期 2015.06.10
申请号 JP20120523594 申请日期 2010.07.15
申请人 发明人
分类号 C01B31/02;H01L21/205;H01L21/3065 主分类号 C01B31/02
代理机构 代理人
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