| 摘要 |
A pulse generator circuit with ferroelectric memory element is disclosed that is optimized for printed, solution-processed thin film transistor processing. In certain embodiments, the circuit comprises dual thin film transistors (14, 16) that operate as a diode and resistor, respectively. Optionally, a third thin film transistor may be provided to operate as a pass transistor in response to an enable signal. The elements of the circuit are configured such that a rising pulse on an input node (IN) triggers an output pulse on an output node (OUT) in the manner of a monostable multivibrator. The ferroelectric memory element is coupled to the output node such that a pulse on the output node may change a state of the ferroelectric memory element |
