| 摘要 |
<p>The present invention relates to a semiconductor memory device and a method of erasing the same, the semiconductor memory device comprising: a memory cell array which includes a plurality of memory cells; and a peripheral circuit unit which applies removal free voltage, removal voltage, and removal operation voltage to the memory cells to remove data stored therein, wherein the memory cell array includes a plurality of source select transistors connected between a source lien and a bit line, a plurality of memory cells, and a plurality of drain select transistors, and when the removal free voltage is applied to the source line during the data removal operation, different removal operation voltages are applied to the source select transistor, among a plurality of source select transistors, which is outermost adjacent to the source line and the rest of the source select transistors.</p> |
