METHOD AND APPARATUS FOR GROWING A SAPPHIRE SINGLE CRYSTAL INGOT

摘要

An embodiment of the present invention provides a method for growing a sapphire single crystal ingot, comprising the steps of: (a) putting alumina melted solution into a crucible and reducing the heat supplied to the crucible while growing a sapphire single crystal ingot from the alumina melted solution; (b) estimating the weight of the sapphire single crystal ingot; (c) determining the rate of change in the estimated weight of the sapphire single crystal ingot; and (d) changing the pattern of reducing the heat supplied to the crucible if the rate of change in weight is larger than a predetermined range.