发明名称 METAL-INSULATOR-SEMICONDUCTOR DEVICES BASED ON SURFACE PLASMON POLARITONS
摘要 Apparatus and techniques are presented such as can be used for electro-optic modulation and detection or other applications. For example, an optical metal grating is disposed on a thin metal film to couple light from broadside to the metal film as surface plasmon-polariton waves; below the metal film is located a thin insulating layer and a doped semiconductor region forming a metal-insulator-semiconductor structure. The device can be configured to operate as a reflection or transmission modulator, or as a photodetector, for example. Modulating the voltage applied to the metal-insulator-semiconductor structure modulates the carrier concentration in the semiconductor near the insulating layer, which modulates the refractive index of the semiconductor in this region, thus modulating the coupling efficiency to the surface plasmon-polaritons, thus modulating the reflectance and transmittance of the device. Modulated incident light produces a modulated photocurrent under bias which may be detected using electronics.
申请公布号 CA2873573(A1) 申请公布日期 2015.06.10
申请号 CA20142873573 申请日期 2014.12.08
申请人 UNIVERSITY OF OTTAWA 发明人 BERINI, PIERRE SIMON JOSEPH;CHEN, CHENGKUN
分类号 H01L31/18;G02B5/18;G02B6/12;H01L31/02;H01L31/0232;H01L31/0256 主分类号 H01L31/18
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