| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce an area required for an ESD protection element. <P>SOLUTION: A semiconductor device comprises: a P-type or an N-type substrate; a circuit arranged on the substrate; a first electrode pad and a second electrode pad for input or output of the circuit; an impurity diffusion region whose conductivity type is different from the type of the substrate; a first wiring that connects the first electrode pad to the impurity diffusion region; and a second wiring that connects the second electrode pad to an area of the substrate excluding the impurity diffusion region. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
