| 摘要 |
In the present invention, a crucible formed of SiC as a main component is used as a container for a Si-C solution. The SiC crucible is heated such that, for example, an isothermal line representing a temperature distribution within the crucible draws an inverted convex shape; and Si and C, which are derived from a main component SiC of the crucible, are eluted from a high-temperature surface region of the crucible in contact with the SiC solution, into the Si-C solution, thereby suppressing precipitation of a SiC polycrystal on a surface of the crucible in contact with the Si-C solution. To the Si-C solution of this state, a SiC seed crystal is moved down from the upper portion of the crucible closer to the Si-C solution and brought into contact with the Si-C solution to grow a SiC single crystal on the SiC seed crystal. |
