Photoelectric conversion device and method for manufacturing the same

摘要

To provide a resource-saving photoelectric conversion device with excellent photoelectric conversion characteristics. Thin part of a single crystal semiconductor substrate, typically a single crystal silicon substrate, is detached to structure a photoelectric conversion device using a thin single crystal semiconductor layer, which is the detached thin part of the single crystal semiconductor substrate. The thin part of the single crystal semiconductor substrate is detached by a method in which a substrate is irradiated with ions accelerated by voltage, or a method in which a substrate is irradiated with a laser beam which makes multiphoton absorption occur. A so-called tandem-type photoelectric conversion device is obtained by stacking a unit cell including a non-single-crystal semiconductor layer over the detached thin part of the single crystal semiconductor substrate.