发明名称 |
Method for manufacturing photomask |
摘要 |
<p>A light-shielding film 2 is formed on a transparent substrate 1. A hard mask film 3 is formed on this light-shielding film 2. The entire hard mask film 3 is made of a chromium-containing material including tin. The film made a chromium-containing material including tin can cause a significant increase in the etching rate at the time of chlorine-containing dry etching. Furthermore, comparing with a film made of a chromium-containing material in which part of chromium is replaced with a light element, the above film has an equal or higher level of etching resistance to fluorine-dry etching. Thus, burden on a photoresist at the time of etching the chromium-containing material film can be reduced. Therefore, high-precision pattern transfer can be performed even in the case that the resist film is thinned.</p> |
申请公布号 |
EP2881791(A1) |
申请公布日期 |
2015.06.10 |
申请号 |
EP20150150710 |
申请日期 |
2013.05.13 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
FUKAYA, SOUICHI;NAKAGAWA, HIDEO;SASAMOTO, KOUHEI |
分类号 |
G03F1/32;G03F1/50;G03F1/54;G03F1/80 |
主分类号 |
G03F1/32 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|