SILICON PHOTOMULTIPLIER AND MANUFACTURING METHOD THEREOF

摘要

A method for manufacturing a silicon photomultiplier according to an embodiment of the present invention includes a step of providing trenches which divides a unit micro pixel region and a substrate which is gap-filled on the trench; a step of forming a PN bonding layer in the unit micro pixel region; a step of stacking a light entering part thin film on the upper side of the substrate; a step of forming a contact hole for touching the PN bonding layer of the micro pixel region with the a light entering part thin film; a step of stacking an oxide layer on the light entering part thin film and filling the contact hole with the oxide layer; and a step of forming a round-type spacer on the sidewall of the contact hole.