| 摘要 |
<p>A semiconductor substrate (1) includes a via-hole (2) extending from a first surface (1a) to a second surface (1b). An electrode pad layer (4) serving as the bottom (2a) of the via-hole (2) is disposed on the second surface (1b). An insulating layer (6) is formed on the first surface (1a) of the semiconductor substrate (1) and the sidewall (2b) of the via-hole (2). A metal layer (7) is formed on the first surface (1a) of the semiconductor substrate (1) and the sidewall (2b) of the via-hole (2) with the insulating layer (6) interposed therebetween and is directly formed on the bottom (2a) of the via-hole (2). An inclined surface (2d) is formed on the sidewall (2b) of the via-hole (2) such that the bottom (2a) has a smaller opening size than the open end (2c) of the via-hole (2). The inclined surface (2d) has asperities (2e).</p> |
