发明名称 デカップリング回路及び半導体集積回路
摘要 <p>A decoupling circuit includes an inverter. The inverter includes i (i is an integer of 1 or more) PMOS transistors each having a first gate electrode, and j (j is an integer of 0 or more) PMOS transistors each having a second gate electrode. The inverter includes m (m is an integer of 1 or more) NMOS transistors each having a third gate electrode, and n (n is an integer of 0 or more) NMOS transistors each having a fourth gate electrode. The first to fourth gate electrodes are coupled to an input end of the inverter. A total area of the first and second gate electrodes is different from a total area of the third and fourth gate electrodes.</p>
申请公布号 JP5731759(B2) 申请公布日期 2015.06.10
申请号 JP20100099580 申请日期 2010.04.23
申请人 发明人
分类号 H03H11/46;H01L21/822;H01L21/8238;H01L27/04;H01L27/092;H03H11/48;H03K19/00 主分类号 H03H11/46
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