发明名称 |
Photomask blank |
摘要 |
A photomask blank comprising a transparent substrate and a chromium-containing film deposited thereon is provided. The chromium-containing film comprises at least one CrC compound layer comprising up to 50 at% of Cr, at least 25 at% of O and/or N, and at least 5 at% of C. From the blank, a photomask having a photomask pattern formed on the substrate is produced, the photomask being used in photolithography of forming a resist pattern with a line width of up to 0.1 µm, using exposure light having a wavelength of up to 250 nm. |
申请公布号 |
EP2881790(A2) |
申请公布日期 |
2015.06.10 |
申请号 |
EP20140196008 |
申请日期 |
2014.12.03 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
SASAMOTO, KOUHEI;INAZUKI, YUKIO;FUKAYA, SOUICHI;NAKAGAWA, HIDEO;KANEKO, HIDEO |
分类号 |
G03F1/00;G03F1/26;G03F1/30;G03F1/54 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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