Gate driving circuit, and array substrate and display panel using the same

摘要

The present invention relates to a gate driving circuit, and a array substrate and a display using the same. The gate driving circuit comprises multiple-stage gate driving units, and each gate driving unit includes: an actuating unit configured to transmit an actuation signal; an energy storage unit configured to execute a charging process under the action of the actuation signal to output a driving voltage; a pull-up unit, a first pull-down unit, a second pull-down unit and a third pull-down unit operating under the action of the driving voltage, wherein a third pull-down unit pulls the driving voltage down to a second reference voltage to apply a reverse bias voltage to the gate-source and/or the gate-drain of transistors in the gate driving circuit, such that the threshold voltage of respective transistors under positive offset can offset reversely, thus effectively eliminating adverse effects of a threshold voltage offset phenomenon of the transistors on the gate driving circuit and improving the operation reliability of the gate driving circuit as well as the array substrate and the display panel thereof.

主权项

1. A gate driving circuit, comprising a plurality of gate driving units, wherein each gate driving unit outputs a gate signal through a gate line coupled thereto, and each gate driving unit includes:
an actuating unit configured to transmit an actuation signal; an energy storage unit coupled to an output end of the actuating unit to receive the actuation signal, and configured to execute a charging process under the action of the actuation signal and output a driving voltage; a pull-up unit coupled between the output end of the energy storage unit and the gate line to receive the driving voltage, and configured to pull up a gate signal on the gate line under the action of the driving voltage and a time pulse signal; a first pull-down unit coupled to the energy storage unit and the gate line, and configured to pull the driving voltage and the gate signal down to a first reference voltage under the action of a first control signal; a second pull-down unit coupled to the energy storage unit and the gate line, and configured to pull the driving voltage and the gate signal down to the first reference voltage under the action of a second control signal; and a third pull-down unit coupled to the energy storage unit, and configured to pull the driving voltage down, under the action of a third control signal, to a second reference voltage lower than the first reference voltage.