发明名称 Multi-layer circuit board with waveguide to microstrip transition structure
摘要 A multi-layer circuit board with a waveguide to microstrip transition structure includes a laminated structure having a plurality of dielectric layers, a top metal frame disposed over the laminated structure, a microstrip line disposed over the laminated structure, a bottom metal frame underlying the laminated structure, and a plurality of conductors electrically connecting the top metal frame and the bottom metal frame. The top metal frame defines a top cavity, the bottom metal frame defines a bottom cavity corresponding to the top cavity, and the microstrip line extends into the top cavity. The laminated structure includes an upper dielectric layer and at least one lower dielectric layer, wherein top cavity exposes a top surface of the upper dielectric layer, and the bottom cavity exposes a bottom surface of the at least one lower dielectric layer.
申请公布号 US9054404(B2) 申请公布日期 2015.06.09
申请号 US201313975872 申请日期 2013.08.26
申请人 Microelectronics Technology, Inc. 发明人 Wang Chung Jui
分类号 H03H5/00;H01P5/08 主分类号 H03H5/00
代理机构 Hamre, Schumann, Mueller & Larson, P.C. 代理人 Hamre, Schumann, Mueller & Larson, P.C.
主权项 1. A multi-layer circuit board with a waveguide to microstrip transition structure, comprising: a laminated structure including a plurality of dielectric layers; a top metal frame disposed over the laminated structure, wherein the top metal frame defines a top cavity; a microstrip line disposed over the laminated structure and extending into the top cavity; a bottom metal frame underlying the laminated structure, wherein the bottom metal frame defines a bottom cavity corresponding to the top cavity; and a plurality of conductors electrically connecting the top metal frame and the bottom metal frame; wherein the laminated structure includes an upper dielectric layer and at least one lower dielectric layer, the top cavity exposes a top surface of the upper dielectric layer, and the bottom cavity exposes a bottom surface of the at least one lower dielectric layer.
地址 Hsinchu TW