| 主权项 |
1. A semiconductor device comprising:
a semiconductor substrate having a first gate groove having first and second side walls facing each other; a first gate insulating film covering the first and second side walls of the first gate groove; a first gate electrode on the first gate insulating film, the first gate electrode being in a lower portion of the first gate groove; a first burying insulating film that buries the first gate groove, the first burying insulating film covering the first gate electrode; a first diffusion region adjacent to a first upper portion of the first gate insulating film, the first upper portion being on an upper portion of the first side wall of the first gate groove; a second diffusion region in contact with a portion of the second side wall of the first gate groove that is larger than the upper portion of the first side wall of the first gate groove adjacent to the first diffusion region; an inter-layer insulating film over the first burying insulating film; a contact plug contacting the first diffusion region, the contact plug being in the first burying insulating film and the interlayer insulating film; a contact pad over the interlayer insulating film, the contact pad contacting an upper surface of the contact plug; and a capacitor electrically coupled to the contact pad. |
