Semiconductor devices

摘要

A semiconductor device can include wiring lines on a substrate and an interlayer insulating structure, between ones of the wiring lines. The wiring lines can include a pore-containing layer that includes a plurality of pores extending away from a surface of the substrate, wherein ones of the pores have respective volumes that increase with a distance from the substrate until reaching an air gap layer above the pore-containing layer and beneath uppermost surfaces of the wiring lines.

主权项

1. A semiconductor device, comprising:
wiring lines on a substrate; an interlayer insulating structure between ones of the wiring lines; and a cover layer covering the wiring lines and the interlayer insulating structure, wherein the interlayer insulating structure comprises a non-porous layer without pores, a pore-containing layer with pores, and an air gap sequentially provided on the substrate, wherein respective volumes of the pores in the pore-containing layer increase monotonically with increased distance from a surface of the substrate.