Three dimensional memory system with intelligent select circuit

摘要

A three dimensional monolithic memory array of non-volatile storage elements includes a plurality of word lines and a plurality of bit lines. The plurality of bit lines are grouped into columns. Performing memory operation on the non-volatile storage elements includes selectively connecting bit lines to sense amplifiers using selection circuits that include a storage device, a select circuit connected to the storage device and one or more level shifters providing two or more interfaces to the respective selection circuit.

主权项

1. A non-volatile storage apparatus, comprising:
a three dimensional array of non-volatile storage elements; a plurality of a first type of control lines in communication with the non-volatile storage elements; a plurality of a second type of control lines in communication with the non-volatile storage elements; a plurality of signal sources; and a plurality of a first selection circuits in communication with the signal sources and the first type of control lines; each of the first selection circuits includes a storage device, a select circuit connected to the storage device and two level shifters connected to the select circuit, the two level shifters provide two output interfaces, each of the output interfaces connect to one of the first type of control lines; each of the first selection circuits include an input connected to one signal source of the signal sources to receive an input signal from the one signal source and store data representing that input signal in the storage device, the select circuit chooses which of the two level shifters will provide an output representing the stored data.