Semiconductor structure and method of generating masks for making integrated circuit

摘要

A method of generating masks for making an integrated circuit includes determining if a coupling capacitance value of a conductive path of a first and second groups of conductive paths of the integrated circuit is greater than a predetermined threshold value. The determination is performed based on at least a resistance-capacitance extraction result of the conductive path and a predetermined level of mask misalignment. The layout patterns are modified to increase an overall vertical distance between the first group of conductive paths and the second group of conductive paths if the coupling capacitance value is greater than the predetermined threshold value.

主权项

1. A method of generating masks for making an integrated circuit, the masks comprising layout patterns corresponding to first and second groups of conductive paths of the integrated circuit, and the method comprising:
determining, by a hardware processor, if a coupling capacitance value of a conductive path of the first and second groups of conductive paths is greater than a predetermined threshold value, the determination being performed based on at least a resistance-capacitance extraction result of the conductive path and a predetermined level of mask misalignment; and modifying the layout patterns to increase an overall vertical distance between the first group of conductive paths and the second group of conductive paths if the coupling capacitance value is greater than the predetermined threshold value.