Light emitting diode

摘要

A light emitting diode includes an epitaxial substrate, an active layer, a tunneling layer, a current spreading layer, and an electrode unit. The active layer includes a first conductive type film, a quantum well structure, and a second conductive type film that is made from AlyInzGa(1-y-z)N, wherein 0y. The tunneling layer has a band gap greater than that of the second conductive film. The current spreading layer is stacked on the tunneling layer.

主权项

1. A light emitting diode comprising:
an epitaxial substrate; an active layer including a first conductive type film that is disposed on said epitaxial substrate, a quantum well structure that is formed on said first conductive type film, and a second conductive type film that is formed on said quantum well structure, said active layer being able to generate light which has a wavelength smaller than 400 nm when applied with an external electric energy, said second conductive type film being made from AlyInzGa(1-y-z)N, wherein 0y, said tunneling layer having a layer thickness not greater than 20 nm, and a band gap greater than that of said second conductive type film; a current spreading layer stacked on and contacting said tunneling layer; and an electrode unit electrically connected to an assembly of said active layer, said tunneling layer and said current spreading layer for transmitting the external electric energy to the assembly of said active layer, said tunneling layer and said current spreading layer.