| 摘要 |
<p>The present invention relates to a cell string capable of implementing neuromorphic technology. The cell string includes a fence type semiconductor which is formed with twin pins which are separated by a trench, a drain electrode which is formed in the trench with a sidewall coated with insulation materials, a gate insulation film stack which is formed on the surface of the fence type semiconductor with a stack structure, and a plurality of control electrodes which are formed on the upper side of the gate insulation film stack. Each cell device models various functions of a synapse by imitating the suppression function of the synapse by operating as a MOS transistor or a nonvolatile transistor or imitating an excitatory transmission function of the synapse by supplying a charge to a bit line by sensing the charge stored in a charge storage layer of the gate insulation film stack by operating as a tunneling transistor or a gated diode according to a bias condition.</p> |
