Method of fabricating semiconductor device using gang bonding and semiconductor device fabricated by the same

摘要

A method of fabricating a semiconductor device using gang bonding and a semiconductor device fabricated by the same, the method comprising preparing a support substrate having a plurality of semiconductor stack structures aligned on a top thereof. Each of the semiconductor stack structures comprises a first conductive semiconductor layer, a second conductive semiconductor layer and an active region interposed between the first and second conductive semiconductor layers. A member having first lead electrodes and second lead electrodes is prepared to correspond to the plurality of semiconductor stack structures. Then, the semiconductor stack structures are bonded to the member while maintaining the semiconductor stack structures on the support substrate. After the semiconductor stack structures are bonded to the member, the member is divided.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
forming a plurality of semiconductor stack structures on a first surface of a support substrate, wherein each of the semiconductor stack structures comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active region interposed between the first and second conductive semiconductor layers; forming a member comprising a plurality of first lead electrodes and second lead electrodes, wherein a first and second lead electrode of the plurality of first and second lead electrodes respectively corresponds to a semiconductor stack structure of the plurality of semiconductor stack structures; bonding the plurality of semiconductor stack structures to the member while maintaining the plurality of semiconductor stack structures on the support substrate; dividing the member after the plurality of semiconductor stack structures are bonded to the member; and forming a plurality of first and second electrodes on the semiconductor stack structures, wherein a first and second electrode of the plurality of first and second electrodes are electrically connected to the first and second conductive semiconductor layers of each of the semiconductor stack structures, respectively, and wherein the first electrodes are electrically connected to one another on the support substrate, and the second electrodes are electrically connected to one another on the support substrate.