| 发明名称 | Semiconductor device, method for manufacturing the same, power supply, and high-frequency amplifier | ||
| 摘要 | A semiconductor device includes: a first transistor that includes a first gate electrode, a first source electrode, a first drain electrode, and a first nitride semiconductor laminate that includes a first electron transit layer and a first electron supply layer; a second transistor that includes a second gate electrode, a second source electrode, a second drain electrode, and a second nitride semiconductor laminate that includes a second electrode transit layer and a second electron supply layer, the second drain electrode being a common electrode that also serves as the first source electrode, the second electron transit layer having part that underlies the second gate electrode and that contains a p-type dopant; and a p-type-dopant-diffusion-blocking layer. | ||
| 申请公布号 | US9054170(B2) | 申请公布日期 | 2015.06.09 |
| 申请号 | US201314066036 | 申请日期 | 2013.10.29 |
| 申请人 | FUJITSU LIMITED | 发明人 | Yamada Atsushi |
| 分类号 | H01L29/778;H01L21/8252;H01L29/66;H01L27/06;H01L29/20 | 主分类号 | H01L29/778 |
| 代理机构 | Kratz, Quintos & Hanson, LLP | 代理人 | Kratz, Quintos & Hanson, LLP |
| 主权项 | 1. A semiconductor device comprising: a first transistor that includes a first gate electrode, a first source electrode, a first drain electrode, and a first nitride semiconductor laminate that includes a first electron transit layer and a first electron supply layer; a second transistor that includes a second gate electrode, a second source electrode, a second drain electrode, and a second nitride semiconductor laminate that includes a second electrode transit layer and a second electron supply layer, the second drain electrode being a common electrode that also serves as the first source electrode, the second electron transit layer having part that underlies the second gate electrode and that contains a p-type dopant; and a p-type-dopant-diffusion-blocking layer,wherein the second nitride semiconductor laminate is disposed higher than the first nitride semiconductor laminate with the p-type-dopant-diffusion-blocking layer interposed between the first and second nitride semiconductor laminates, and the first gate electrode and the second source electrode are electrically coupled to each other to establish cascode connection of the first transistor to the second transistor. | ||
| 地址 | Kawasaki JP | ||