Method of fabricating semiconductor device

摘要

In a method of fabricating a semiconductor device, a target layer and a first material layer are sequentially formed on a substrate. A plurality of second material layer patterns are formed on the first material layer, the second material layer patterns extending in a first horizontal direction. A plurality of hardmask patterns extending in a second horizontal direction are formed on the plurality of second material layer patterns and the first material layer, wherein the second horizontal direction is different from the first horizontal direction. A first material layer pattern is formed by etching the first material layer using the plurality of hardmask patterns and the plurality of second material layer patterns as etch masks. A target layer pattern with a plurality of holes is formed by etching the target layer using the first material layer pattern as an etch mask.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
sequentially forming a target layer and a first material layer on a substrate, the first material layer directly on the target layer; forming a plurality of second material layer patterns directly on the first material layer, the second material layer patterns extending in a first horizontal direction; forming a plurality of hardmask patterns extending in a second horizontal direction, on the plurality of second material layer patterns and the first material layer, wherein the second horizontal direction is different from the first horizontal direction; forming a first material layer pattern and exposing portions of the target layer by etching the first material layer using the plurality of hardmask patterns extending in the second horizontal direction and the plurality of second material layer patterns extending in the first horizontal direction as etch masks; and forming a target layer pattern with a plurality of holes by etching the target layer using the first material layer pattern as an etch mask, wherein the plurality of second material layer patterns and the plurality of hard mask patterns are line patterns, respectively.