Method of fabricating semiconductor device

摘要

A method of fabricating a semiconductor device includes forming a trench in a substrate, forming a pre-gate insulating film along side surfaces and a bottom surface of the trench, and oxidizing the pre-gate insulating film through a densification process.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
forming a trench in a substrate; forming a pre-gate insulating film along side surfaces and a bottom surface of the trench; oxidizing the pre-gate insulating film through a densification process; forming a first gate insulating film by oxidizing the pre-gate insulating film, and forming a gate electrode in the trench having the first gate insulating film to partially fill the trench.