Method for manufacturing semiconductor device

摘要

A method for manufacturing a high-quality semiconductor device having stable characteristics is provided. The method for manufacturing the semiconductor device includes the steps of: preparing a silicon carbide layer having a main surface; forming a trench in the main surface by removing a portion of the silicon carbide layer; and removing a portion of a side wall of the trench by thermal etching.

主权项

1. A method for manufacturing a semiconductor device, comprising the steps of:
preparing a silicon carbide layer having a main surface; forming a trench in said main surface having a side wall substantially perpendicular to said main surface, by removing a portion of said silicon carbide layer; forming an end surface inclined relative to said main surface and exhibiting a predetermined crystal plane by removing a portion of said side wall of said trench by thermal etching; forming a first contact region of a first conductivity type and a second contact region of a second conductivity type on said main surface of said silicon carbide layer; forming a gate insulating film to extend from an inside of said trench onto upper surfaces of said first contact region and said second contact region; and forming a gate electrode on said gate insulating film so as to extend to an upper portion higher than the upper surfaces of said first contact region and said second contact region.