NH3 containing plasma nitridation of a layer on a substrate

摘要

Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method includes exposing a first layer of a substrate to a plasma formed from a process gas comprising predominantly a mixture of ammonia (NH3) and a noble gas, wherein ammonia is about 0.5 to about 15 percent of the process gas; and maintaining the process chamber at a pressure of about 10 mTorr to about 80 mTorr while exposing the first layer to the plasma to transform at least an upper portion of the first layer into a nitrogen-containing layer.

主权项

1. A method of forming a nitrogen-containing layer on a substrate disposed on a substrate support in a process chamber, comprising:
exposing a first layer of a 3-dimensional FINFET substrate structure to a radio frequency (RF) plasma formed from a process gas comprising predominantly a mixture of ammonia (NH3) and a noble gas, wherein ammonia is about 2.5 percent of the process gas and the noble gas is predominantly the balance; maintaining the substrate at a temperature of about 350 degrees Celsius to about 450 degrees Celsius while exposing the first layer to the RF plasma; and maintaining the process chamber at a pressure of about 10 mTorr to about 80 mTorr while exposing the first layer to the RF plasma to transform at least an upper portion of the first layer into a nitrogen-containing layer.