发明名称 Silicon shaping
摘要 One embodiment for forming a shaped substrate for an electronic device can form a shaped perimeter to define the substrate shape on the surface of a substrate. The shaped perimeter can extend at least part way into the substrate. A subsequent thinning process can remove substrate material and expose the shaped perimeter effectively forming shaped dies from the substrate.
申请公布号 US9053952(B2) 申请公布日期 2015.06.09
申请号 US201213631769 申请日期 2012.09.28
申请人 Apple Inc. 发明人 Arnold Shawn X.;Last Matthew E.
分类号 H01L29/02;H01L21/78;H01L21/762;H01L29/06;H01L21/683;H01L21/822 主分类号 H01L29/02
代理机构 Downey Brand LLP 代理人 Downey Brand LLP
主权项 1. A method for forming a shaped die from a substrate, the substrate including at least one circuit element, the method comprising: forming a trench partially extending through a thickness of the substrate, the trench defining a first edge of the shaped die and a second edge the shaped die opposite the first edge, wherein a terminal end of the trench includes an elongated cavity that chamfers the second edge; attaching a handle to the substrate; thinning the substrate such that the trench extends all the way through the thickness of the substrate; and separating the shaped die from a remaining portion of the substrate by removing the handle.
地址 Cupertino CA US