发明名称 |
Silicon shaping |
摘要 |
One embodiment for forming a shaped substrate for an electronic device can form a shaped perimeter to define the substrate shape on the surface of a substrate. The shaped perimeter can extend at least part way into the substrate. A subsequent thinning process can remove substrate material and expose the shaped perimeter effectively forming shaped dies from the substrate. |
申请公布号 |
US9053952(B2) |
申请公布日期 |
2015.06.09 |
申请号 |
US201213631769 |
申请日期 |
2012.09.28 |
申请人 |
Apple Inc. |
发明人 |
Arnold Shawn X.;Last Matthew E. |
分类号 |
H01L29/02;H01L21/78;H01L21/762;H01L29/06;H01L21/683;H01L21/822 |
主分类号 |
H01L29/02 |
代理机构 |
Downey Brand LLP |
代理人 |
Downey Brand LLP |
主权项 |
1. A method for forming a shaped die from a substrate, the substrate including at least one circuit element, the method comprising:
forming a trench partially extending through a thickness of the substrate, the trench defining a first edge of the shaped die and a second edge the shaped die opposite the first edge, wherein a terminal end of the trench includes an elongated cavity that chamfers the second edge; attaching a handle to the substrate; thinning the substrate such that the trench extends all the way through the thickness of the substrate; and separating the shaped die from a remaining portion of the substrate by removing the handle. |
地址 |
Cupertino CA US |