Method of error correction of a memory

摘要

A flash memory includes a memory sector, a command interface, a first signal buffer, a control signal generation circuit, a data input buffer, an error correction circuit, an address buffer, an address signal generation circuit, a plurality of data memory circuits, and write circuit. The command interface receives a write data input instruction from an external device to generate a write data input instruction signal, and receives a write instruction from the external device to generate a write instruction signal. The error correction circuit is activated by the write data input instruction signal to receive the write data in synchronization with the write enable signal, and is activated by the write instruction signal to generate a check data for an error correction in synchronization with the control signal.

主权项

1. A method of error correction of a memory comprising:
generating check data from information data by replacing at least one of the information data with predetermined dummy data; writing the information data and the check data in a memory sector of the memory, the memory sector having a plurality of memory cells, and the information data and the check data being written in the memory cells; reading the information data and the check data from the memory sector; and detecting and correcting an error of the written information data based on the written information data and the written check data, the written information data and the written check data being read from the memory sector, wherein the correction corrects the written information data by replacing at least one of the written information data with the dummy data when the written information data differs from the check data.