Photolithography systems and associated alignment correction methods

摘要

Several embodiments of photolithography systems and associated methods of alignment correction are disclosed herein. In one embodiment, a method for correcting alignment errors in a photolithography system includes detecting a first alignment error at a first location of a first microelectronic substrate and a second alignment error at a second location of a second microelectronic substrate. The second location generally corresponds to the first location. The method also includes deriving a statistical dispersion between the first alignment error and the second alignment error and associating the first and second locations with an alignment procedure based on the derived statistical dispersion.

主权项

1. A method for correcting alignment errors in a photolithography system, the method comprising:
detecting a first alignment error at a first location of a first micro electronic substrate; detecting a second alignment error at a second location of a second microelectronic substrate, the second location corresponding to the first location; deriving a statistical dispersion between the first alignment error and the second alignment error; comparing the statistical dispersion, using a controller, to a predetermined threshold at the first location; comparing the statistical dispersion, using a controller, to the predetermined threshold at the second location; associating the first location with a first alignment calculation based on the comparison at the first location; associating the second location with a second alignment calculation based on the comparison at the second location, wherein the second alignment calculation is different than the first alignment calculation; and wherein the first alignment calculation is a linear alignment calculation and the second alignment calculation is a zone alignment calculation.