Light emitting device, manufacturing method thereof, and optical transceiver

摘要

The light emitting device includes an active layer formed on a semiconductor substrate for emitting light, a semiconductor layer of a first conductivity type electrically connected to one end of the active layer, a semiconductor layer of a second conductivity type electrically connected to the other end of the active layer, first and second electrodes, a feedback mechanism for laser oscillation, and a waveguide for guiding the light emitted from the active layer, in which the active layer is made of a semiconductor having an affinity with a silicon CMOS process, and the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, and the waveguide are each made of silicon as a part of the semiconductor substrate.

主权项

1. A light emitting device, comprising:
an active layer, formed on a semiconductor substrate, for emitting light, the active layer including:
a central region, anda mode conversion region that tapers, in thickness and width, along the optical axis; a semiconductor layer of a first conductivity type electrically connected to one end of the active layer; a semiconductor layer of a second conductivity type electrically connected to the other end of the active layer; first and second electrodes; a feedback mechanism for laser oscillation; and a waveguide for guiding the light emitted from the active layer, wherein the active layer is made of a semiconductor having an affinity with a silicon CMOS process, wherein the semiconductor layer of the first conductivity type, the semiconductor layer of the conductivity type, and the waveguide are each made of silicon as a part of the semiconductor substrate, and wherein the mode conversion region couples the emitted light to the waveguide to minimize optical loss.