| 发明名称 | SRAM cells with dummy insertions | ||
| 摘要 | A device includes a first pull-up transistor, a second pull-up transistor, and a dummy gate electrode between the first and the second pull-up transistors. The first and the second pull-up transistors are included in a first Static Random Access Memory (SRAM) cell. | ||
| 申请公布号 | US9053974(B2) | 申请公布日期 | 2015.06.09 |
| 申请号 | US201213594620 | 申请日期 | 2012.08.24 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Chen Chao-Hsuing;Wang Ling-Sung;Lin Chi-Yen |
| 分类号 | H01L21/70;H01L27/11;H01L27/02 | 主分类号 | H01L21/70 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. A device comprising: a first pull-up transistor; a second pull-up transistor; and a dummy gate electrode between the first and the second pull-up transistors, wherein the first and the second pull-up transistors are comprised in a first Static Random Access Memory (SRAM) cell. | ||
| 地址 | Hsin-Chu TW | ||