Semiconductor device

摘要

An object of the present invention is to provide a semiconductor device having a novel structure in which in a data storing time, stored data can be stored even when power is not supplied, and there is no limitation on the number of writing. A semiconductor device includes a first transistor including a first source electrode and a first drain electrode; a first channel formation region for which an oxide semiconductor material is used and to which the first source electrode and the first drain electrode are electrically connected; a first gate insulating layer over the first channel formation region; and a first gate electrode over the first gate insulating layer. One of the first source electrode and the first drain electrode of the first transistor and one electrode of a capacitor are electrically connected to each other.

主权项

1. A semiconductor device comprising:
a first transistor comprising:
a first source electrode and a first drain electrode;a first oxide semiconductor layer overlapping with the first source electrode and the first drain electrode;a first gate insulating layer overlapping with the first oxide semiconductor layer; anda first gate electrode overlapping with the first gate insulating layer,a second transistor comprising:
a second source electrode and a second drain electrode;a second oxide semiconductor layer overlapping with the second source electrode and the second drain electrode;a second gate insulating layer overlapping with the second oxide semiconductor layer; anda second gate electrode overlapping with the second gate insulating layer, a capacitor; a source line; a bit line; a word line; a first signal line; and a second signal line, wherein the second gate electrode, one of the first source electrode and the first drain electrode, and one electrode of the capacitor are electrically connected to one another, wherein the source line and the second source electrode are electrically connected to each other, wherein the bit line and the second drain electrode are electrically connected to each other, wherein the first signal line and the other of the first source electrode and the first drain electrode are electrically connected to each other, wherein the second signal line and the first gate electrode are electrically connected to each other, and wherein the word line and the other electrode of the capacitor are electrically connected to each other.