| 发明名称 | Structure and method for a forming free resistive random access memory with multi-level cell | ||
| 摘要 | A method for operating a multi-level resistive random access memory (RRAM) cell having a current-controlling device and a RRAM device connected together. The method is free of a “forming” step and includes setting the RRAM device to one of resistance levels by controlling the current-controlling device to one of current levels. The setting the RRAM device includes applying a first voltage to a top electrode of the RRAM device and applying a second voltage to a bottom electrode of the RRAM device. The second voltage is higher than the first voltage. | ||
| 申请公布号 | US9053781(B2) | 申请公布日期 | 2015.06.09 |
| 申请号 | US201213624539 | 申请日期 | 2012.09.21 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Tsai Chun-Yang;Ting Yu-Wei;Huang Kuo-Ching |
| 分类号 | G11C11/00;G11C13/00;H01L45/00;H01L27/24 | 主分类号 | G11C11/00 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A method for operating a multi-level resistive random access memory (RRAM) cell having a current-controlling device and a RRAM device connected together, the method being free of a “forming” step and comprising setting the RRAM device to one of resistance levels by controlling the current-controlling device to one of current levels, wherein the setting the RRAM device includes applying a first voltage to a top electrode of the RRAM device and applying a second voltage to a bottom electrode of the RRAM device, the second voltage being higher than the first voltage, wherein setting the RRAM device occurs without the RRAM device having previously undergone the “forming” step, wherein the “forming” step generates a conductive path in a resistive material layer of the RRAM device. | ||
| 地址 | Hsin-Chu TW | ||