Pattern forming process

摘要

A pattern is formed by coating a chemically amplified resist composition comprising a resin having a dissolution rate in an organic solvent developer that lowers under the action of acid onto a processable substrate, prebaking, exposing the resist film, PEB, developing in an organic solvent developer to form a negative pattern, coating a solution comprising Si, Ti, Zr, Hf or Al, prebaking, and dry etching to effect image reversal for converting the negative pattern into a positive pattern.

主权项

1. A pattern forming process comprising the steps of:
coating a chemically amplified resist composition comprising a resin having a dissolution rate in an organic solvent developer that lowers under the action of acid, a photoacid generator capable of generating an acid upon exposure to high-energy radiation, and a first organic solvent, onto a processable substrate, prebaking the coating to remove the unnecessary solvent and to form a resist film, exposing patternwise the resist film to high-energy radiation, post-exposure baking, developing in an organic solvent developer to form a negative pattern, coating a solution comprising an element selected from the group consisting of silicon, titanium, zirconium, hafnium, and aluminum onto the negative pattern-bearing substrate, prebaking, and dry etching to effect image reversal for converting the negative pattern into a positive pattern.