发明名称 Semiconductor device having diode and method of forming the same
摘要 A semiconductor device includes a conductive line, a diode on the conductive line, one or more insulating patterns adjacent to diode, and a data storage region coupled to the diode. An upper surface of the diode is between the one or more insulating patterns and the data storage region. The data storage region may include a phase-change region, and the diode may taper in width between two insulating patterns in one arrangement.
申请公布号 US9054296(B2) 申请公布日期 2015.06.09
申请号 US201314096055 申请日期 2013.12.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Kim Sea-Phyo;Lee Dong-Bok;Lee Chan-Min
分类号 H01L29/02;H01L45/00;H01L27/24 主分类号 H01L29/02
代理机构 Lee & Morse, P.C. 代理人 Lee & Morse, P.C.
主权项 1. A semiconductor device, comprising: a lower interconnection on a substrate; a diode on the lower interconnection; a pair of first insulating patterns adjacent to respective side surfaces of the diode, the pair of first insulating patterns spaced from one another; and a data storage element on the diode, wherein an upper end of the diode protrudes at a higher level than the pair of first insulating patterns and wherein the diode includes: a lower part between the pair of first insulating patterns; and an upper part at a higher level than the pair of first insulating patterns, wherein side surfaces of the lower part and upper part are offset relative to each other.
地址 Suwon-si, Gyeonggi-do KR