Semiconductor devices including a guard ring and related semiconductor systems

摘要

Semiconductor devices are provided. The semiconductor devices may include a substrate and a transistor on the substrate. The semiconductor devices may include a first guard ring of first conductivity type in the substrate adjacent the transistor. The semiconductor devices may include a second guard ring of second conductivity type opposite the first conductivity type in the substrate adjacent the first guard ring. Related semiconductor systems are also provided.

主权项

1. A semiconductor device comprising:
a substrate; a transistor on the substrate, the transistor comprising a gate electrode, a source electrode, and a drain electrode; a first guard ring of first conductivity type in the substrate adjacent the transistor; and a second guard ring of second conductivity type opposite the first conductivity type in the substrate adjacent the first guard ring, wherein the first guard ring, the second guard ring, and at least one of the source electrode and the drain electrode are configured to receive an equivalent bias, wherein a depth of the first guard ring is greater in the substrate than a depth of the second guard ring, and wherein the second guard ring is configured to block movement of charges from the drain electrode such that the charges gather in the first guard ring.